S8550-C Datasheet

S8550-C

Datasheet specifications

Datasheet's name S8550-C
File size 223.387 KB
File type pdf
Number of pages 2

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Other documentations

S8550-D 6 pages

Technical specifications

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: Foshan Blue Rocket Elec S8550-C
  • Transistor Type: PNP
  • Operating Temperature: +150°C@(Tj)
  • Collector Current (Ic): 800mA
  • Power Dissipation (Pd): 625mW
  • Transition Frequency (fT): 200MHz
  • DC Current Gain (hFE@Ic,Vce): 120@100mA,1V
  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 25V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 280mV@500mA,50mA
  • Package: TO-92L
  • Manufacturer: Foshan Blue Rocket Elec
  • Part id: 611471

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